COMPARISON OF GAAS FET MODELS FOR SIMULATING THE I-V CHARACTERISTICS SUB MICRON GAAS FET

N. M. MEMON, A.A. MEMON, A. A. MEMON

Abstract


The accuracy of a model is reported by evaluating its RMS error values as a function of device biasing. In this paper the comparison of five different FET models i.e. Curtice, Materka, Statz, Ahmed and Noor, have been presented, and their ability to simulate submicron GaAs FET‟s characteristics is checked by MATLAB. It is noted that the Noor model, when applied to high frequency FETs, offers better simulation results compared to other models under consideration. Whereas, the simulated results of Ahmed model are close to the Noor model. These models have been examined and discussed by considering the variables involved in their definition along with fitting parameters. To demonstrate the validity of a model, I-V characteristics of short channel FETs, are simulated and compared with experimental data.

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